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NAND Flash

NAND flash memory, also known as raw NAND, consists of only the memory chip. Because NAND has a limited number of write times, an external controller is needed to make sure that data is not always written to a fixed location but spread evenly across all cells. Its advantage is the low cost per bit and its capacity. There are several types of raw NAND flash memory.


Serial / SPI NAND

Serial or SPI NAND organizes the memory cells of a NAND memory into a row of serial banks. It is a low-cost memory with a small form factor that makes it ideal for code handling in space-constrained embedded applications like smartwatches, medical devices or various automotive environments.


Parallel NAND

Parallel NAND Flash is a type of NAND Flash memory that is organized into multiple parallel banks, rather than a single serial bank. This allows for much higher data throughput than other memory devices, making it ideal for applications that require high data bandwidth. This memory utilizes the 8-bit multiplexed bus to provide much faster data transferring, addressing, and processing.


SLC, MLC, TLC, QLC Flash


  • SLC, or single-level cells, store one bit per cell. SLC has the highest endurance, fastest write speech and lowest power consumption. However, it is also the most expensive type of NAND flash storage as it has about 100,000 write cycles per cell before deteriorating.
  • MLC, or multi-level cells, stores two bits per cell thus double the amount of data in the same sized device. This reduces the costs per bit. However, MLC only supports about 10,000 write cycles. So it’s a good memory choice for high-density but low-cycle applications.
  • TLC, is able to store three bits per cell. The higher capacity comes at a trade-off: it can only support 4,000 write cycles per cell before deteriorating.
  • QLC, or quad-level cells, store four bits per cell. QLCs have even less endurance and are generally less expensive.

3D NAND -- 2D or planar NAND has only one layer of memory cells, whereas 3D NAND stacks cells on top of one another. Samsung refers to 3D NAND as Vertical NAND or V-NAND.

Contact us if you are looking for a specific product


NAND Flash

NAND flash memory, also known as raw NAND, consists of only the memory chip. Because NAND has a limited number of write times, an external controller is needed to make sure that data is not always written to a fixed location but spread evenly across all cells. Its advantage is the low cost per bit and its capacity. There are several types of raw NAND flash memory.


Serial / SPI NAND

Serial or SPI NAND organizes the memory cells of a NAND memory into a row of serial banks. It is a low-cost memory with a small form factor that makes it ideal for code handling in space-constrained embedded applications like smartwatches, medical devices or various automotive environments.


Parallel NAND

Parallel NAND Flash is a type of NAND Flash memory that is organized into multiple parallel banks, rather than a single serial bank. This allows for much higher data throughput than other memory devices, making it ideal for applications that require high data bandwidth. This memory utilizes the 8-bit multiplexed bus to provide much faster data transferring, addressing, and processing.


SLC, MLC, TLC, QLC Flash


  • SLC, or single-level cells, store one bit per cell. SLC has the highest endurance, fastest write speech and lowest power consumption. However, it is also the most expensive type of NAND flash storage as it has about 100,000 write cycles per cell before deteriorating.
  • MLC, or multi-level cells, stores two bits per cell thus double the amount of data in the same sized device. This reduces the costs per bit. However, MLC only supports about 10,000 write cycles. So it’s a good memory choice for high-density but low-cycle applications.
  • TLC, is able to store three bits per cell. The higher capacity comes at a trade-off: it can only support 4,000 write cycles per cell before deteriorating.
  • QLC, or quad-level cells, store four bits per cell. QLCs have even less endurance and are generally less expensive.

3D NAND -- 2D or planar NAND has only one layer of memory cells, whereas 3D NAND stacks cells on top of one another. Samsung refers to 3D NAND as Vertical NAND or V-NAND.

Contact us if you are looking for a specific product


MEMPHIS Electronic GmbH

Basler Str. 5

61352 Bad Homburg

Germany

Phone: +49 6172 90350

Email: info@memphis.de

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MEMPHIS Electronic GmbH

Basler Str. 5

61352 Bad Homburg

Germany

Phone: +49 6172 90350

Email: info@memphis.de

Imprint

Privacy Policy

Terms and Conditions

Contact

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